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符汪洋
副教授,博士

办公地址:清华大学逸夫技术科学楼B809房间
电子邮件:fwy2018@mail.tsinghua.edu.cn          

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  • 教育背景
  • 工作履历
  • 学术兼职
  • 研究领域
  • 研究概况
  • 奖励与荣誉
  • 学术成果

2004年8月 - 2009年7月 中国科学院物理研究所,博士
1999年9月 - 2003年7月 清华大学材料科学与工程系,学士          

2018年12月 - 至今 澳门新葡萄赌场娱乐,副教授
2015年5月 - 2018年10月 荷兰莱顿大学化学所,Veni学者
2014年10月 - 2015年4月 德国于利希研究中心,洪堡学者
2009年8月 - 2014年9月 瑞士巴塞尔大学物理系,博士后          

目前担任Nature Commun.、Nano Lett.、Adv. Mater.、Phys. Rev. Appl.、Biosensors、IEEE等期刊审稿人。          

纳电子生物化学传感器
高灵敏单分子检测
功能化纳电子器件      

        主要从事利用新材料、新原理开发生物化学传感器及功能化纳电子器件的研究工作。至今在Science子刊Sci. Adv.、Nat. Commun.、Nano Lett.、Adv. Mater.、Nanoscale、APL等国际学术刊物上发表论文50余篇,总计被引用1200余次。利用等电荷点和倍频放大原理检测微弱生物信号、利用高频突破Debye屏蔽等研究成果,受到众多学术媒体的关注及国内外学者的广泛引用。主持中组部青年千人项目。
 

2015年 荷兰Veni基金
2015年 瑞士APM学者
2014年 德国洪堡学者

       

代表性学术成果
1.L. Jiang, W. Fu (co-first author), Y. Y. Birdja, M. T. M. Koper, and G. F. Schneider,* “Quantum and electrochemical interplays in hydrogenated graphene”, Nat. Commun. 2018, 9, 793.
2.W. Fu,* L. Feng, G. Panaitov, D. Kireev, D. Mayer, A. Offenh?usser, and H.-J. Krause, “Biosensing near the neutrality point of graphene”, Sci. Adv. 2017, 3, e1701247.
3.W. Fu, T. F. van Dijkman, L. Lima, F. Jiang, G. F. Schneider, and E. Bouwman, “Ultrasensitive ethene detector based on a graphene-copper(I) hybrid material”, Nano Lett. 2017, 10.1021/acs.nanolett.7b04466.
4.D. Kireev, M. Brambach, S. Seyock, V. Maybeck, W. Fu, B. Wolfrum, and A. Offenh?usser, “Graphene transistors for interfacing with cells: towards a deeper understanding of liquid gating and sensitivity”, Sci. Rep. 2017, 7, 6658.
5.W. Fu,* L. Feng, D. Mayer, G. Panaitov, D. Kireev, A. Offenh?usser, and H.-J. Krause, “Electrolyte-gated graphene ambipolar frequency multipliers for biochemical sensing”, Nano Lett. 2016, 16, 2295.
6.W. Fu, L. Jiang, E. van Geest, L. Lima, and G. F. Schneider,* “Sensing at the surface of a graphene field-effect transistor”, Adv. Mater. 2016, 10.1002/adma.201603610.
7.W. Fu,* P. Makk, R. Maurand, M. Br?uninger, and C. Sch?nenberger,* “Large-scale fabrication of BN tunnel barriers for graphene spintronics”, J. Appl. Phys. 2014, 116, 074306.
8.W. Fu,* El M. Abbassi, T. Hasler, M. Jung, M. Steinacher, M. Calame, C. Sch?nenberger,* G. Puebla-Hellmann, S. Hellmüller, T. Ihn, and A. Wallraff, “Electrolyte gate dependent high-frequency measurement of graphene FETs for sensing applications”, Appl. Phys. Lett. 2014, 104, 013102.
9.R. Pantelic,* W. Fu (co-first author), C. Sch?nenberger, H. Stahlberg, “Rendering graphene supports hydrophilic with non-covalent aromatic functionalization for transmission electron microscopy”, Appl. Phys. Lett. 2014, 104, 134103.
10.W. Fu, C. Nef, A. Tarasov, M. Wipf, R. Stoop, O. Knopfmacher, M. Weiss, M. Calame, and C. Sch?nenberger,* “High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization”, Nanoscale 2013, 5, 12104.
11.X. Zhang, W. Fu, C. Palivan,* W. Meier,* “Natural channel protein inserts and functions in a completely artificial, solid-supported bilayer membrane”, Sci. Rep. 2013, 3, 2196.
12.F. Valmorra,* G. Scalari,* C. Maissen, W. Fu, C. Sch?nenberger, J. W. Choi, H. G. Park, M. Beck, and J. Faist,* “Low-Bias active control of terahertz waves by coupling large-area CVD graphene to a terahertz metamaterial”, Nano Lett. 2013, 13, 3193.
13.W. Fu, C. Nef, O. Knopfmacher, A. Tarasov, M. Weiss, M. Calame, and C. Sch?nenberger,* “Graphene transistors are insensitive to pH changes in solution”, Nano Lett. 2011, 11, 3597.
14.W. Fu, S. Y. Qin, L. Liu, T. H. Kim, S. Hellstrom, W. L. Wang,* W. J. Liang, X. D. Bai, A. P. Li,* and E. G. Wang,* “Ferroelectric Gated Electrical Transport in CdS Nanotetrapods”, Nano Lett. 2011, 11, 1913.
15.W. Fu, Z. Xu, X. D. Bai,* C. Z. Gu, and E. G. Wang,* “Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor”, Nano Lett. 2009, 9, 921.
16.W. Fu, L. Liu, X. D. Bai,* and E. G. Wang,* “Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes”, Nanotechnology 2009, 20, 475305.
17.W. Fu, Z. Xu, K. H. Liu, W. L. Wang, X. D. Bai,* and E. G. Wang,* “Nanowire field-effect transistor with Bi1.5Zn1.0Nb1.5O7 dielectric”, Appl. Phys. Lett. 2008, 93, 213107.
18.W. Fu, H. Wang, L. Z. Cao, and Y. L. Zhou,* “Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films with enhanced performance”, Appl. Phys. Lett. 2008, 92, 182910.
19.W. Fu, L. Z. Cao, S. F. Wang, Z. H. Sun, B. L. Cheng, Q. Wang, and H. Wang,* “Dielectric properties of Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition”, Appl. Phys. Lett. 2006, 89, 132908.

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